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NXP Semiconductors
NUP1301
Ultra low capacitance ESD protection array
2. Pinning information
Table 2.
Pinning
Pin
1
Symbol Description
GND
ground
Simpli?ed outline
Graphic symbol
2
3
V CC
I/O
supply voltage
input/output
3
3
1
2
1
2
006aaa763
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
NUP1301
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking
Type number
NUP1301
Marking code [1]
LJ*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
V RRM
repetitive peak reverse
-
80
V
voltage
V R
reverse voltage
-
80
V
I F
I FRM
forward current
repetitive peak forward
t p ≤ 1 ms; δ ≤ 0.25
[1]
-
-
215
500
mA
mA
current
NUP1301_1
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 11 May 2009
2 of 13
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